IRFH7084TRPBF vs IRFH5020TRPBF Comparison
Detailed side-by-side comparison of IRFH7084TRPBF by Infineon and IRFH5020TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH7084TRPBF
IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon
IRFH7084TRPBF ✓ ActiveInfineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF ✓ ActiveSpecification Comparison
| Parameter | IRFH7084TRPBF | IRFH5020TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.45 | $0.36 |
| FET Type | N-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | StrongIRFET™ (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A | — |
| Silicon-Limited Drain Current | 265 A | — |
| Power Dissipation (PD, Tc=25°C) | 156 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ | — |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V | — |
| Input Capacitance (Ciss) max @ 25V | 6560 pF | — |
| Operating Temperature Range | -55°C to +175°C (TJ) | -55 °C to +150 °C (TJ max) |
| Package | 8-PQFN 5x6 mm (SuperSO8) | — |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per industry standard for PQFN-8) |
| RoHS Status | Compliant | — |
| Halogen Free | Compliant | — |
| RthJC max | 0.96 °C/W (per datasheet) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Family | — | HEXFET Power MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TA=25°C | — | 5.1 A |
| Pulsed Drain Current (IDM) | — | 63 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 55 mΩ |
| Gate Charge (Qg) typ | — | 11 nC |
| Power Dissipation (TA=25°C) | — | 3.6 W |
| Power Dissipation (TC=25°C) | — | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | — | 0.8 °C/W |
| Package Type | — | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | — | ≤ 0.9 mm |
| Qualification Standard | — | JEDEC (Normal level) |
| Gate Drive Optimization | — | 10 V VGS |
| RoHS Compliance | — | Compliant (Pb-free suffix PBF) |