IRFH8201TRPBF vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of IRFH8201TRPBF by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH8201TRPBF
IRFH8201TRPBF - 25V N-Channel StrongIRFET MOSFET | Infineon
IRFH8201TRPBF β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | IRFH8201TRPBF | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.74 |
| FET Type | N-Channel | β |
| Technology | StrongIRFET (trench MOSFET) | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 49 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | 324 A | β |
| RDS(on) max at VGS=10V | 0.95 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | β |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | β |
| Output Capacitance (Coss) | 7.33 nF | β |
| Reverse Transfer Capacitance (Crss) | 850 pF | β |
| Power Dissipation (TA) | 3.6 W | β |
| Power Dissipation (TC) | 156 W | β |
| Operating Temperature Range | -55C to +150C | -55C to +175C |
| Package | SuperSO8 5x6 (PQFN-8) with exposed pad | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |