IRFH8201TRPBF vs IRFH5020TRPBF Comparison
Detailed side-by-side comparison of IRFH8201TRPBF by Infineon and IRFH5020TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH8201TRPBF
IRFH8201TRPBF - 25V N-Channel StrongIRFET MOSFET | Infineon
IRFH8201TRPBF β ActiveInfineon
IRFH5020TRPBF
IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
IRFH5020TRPBF β ActiveSpecification Comparison
| Parameter | IRFH8201TRPBF | IRFH5020TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.36 |
| FET Type | N-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | StrongIRFET (trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at TA=25C | 49 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | 324 A | 63 A |
| RDS(on) max at VGS=10V | 0.95 mOhm | 55 mΞ© |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | β |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | β |
| Output Capacitance (Coss) | 7.33 nF | β |
| Reverse Transfer Capacitance (Crss) | 850 pF | β |
| Power Dissipation (TA) | 3.6 W | β |
| Power Dissipation (TC) | 156 W | β |
| Operating Temperature Range | -55C to +150C | -55 Β°C to +150 Β°C (TJ max) |
| Package | SuperSO8 5x6 (PQFN-8) with exposed pad | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per industry standard for PQFN-8) |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Product Family | β | HEXFET Power MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 5.1 A |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| Gate Charge (Qg) typ | β | 11 nC |
| Power Dissipation (TA=25Β°C) | β | 3.6 W |
| Power Dissipation (TC=25Β°C) | β | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | β | 0.8 Β°C/W |
| Package Type | β | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | β | β€ 0.9 mm |
| Qualification Standard | β | JEDEC (Normal level) |
| Gate Drive Optimization | β | 10 V VGS |
| RoHS Compliance | β | Compliant (Pb-free suffix PBF) |