IRFH8318TRPBF vs IRFH7084TRPBF Comparison

Detailed side-by-side comparison of IRFH8318TRPBF by Infineon and IRFH7084TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH8318TRPBF

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ Active
Infineon
IRFH7084TRPBF

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ Active

Specification Comparison

Parameter IRFH8318TRPBF IRFH7084TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.45
Manufacturer Infineon Technologies
Part Number IRFH8318TRPBF
Technology StrongIRFET™ (N-Channel Trench MOSFET) StrongIRFET™ (trench MOSFET)
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta=25°C 27 A
Continuous Drain Current (ID) at Tc=25°C 120 A
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ
Total Gate Charge (Qg) 41 nC
Power Dissipation (Ta) 3.6 W
Power Dissipation (Tc) 59 W
Package PQFN 5x6 (SuperSO8, 8-PowerTDFN) 8-PQFN 5x6 mm (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55°C to +150°C
RoHS Status Compliant Compliant
Lead-Free Yes
MSL Level 1 1
Description Synchronous MOSFET for high-frequency buck converters
FET Type N-Channel
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A
Silicon-Limited Drain Current 265 A
Power Dissipation (PD, Tc=25°C) 156 W
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V 6560 pF
Operating Temperature Range -55°C to +175°C (TJ)
Halogen Free Compliant
RthJC max 0.96 °C/W (per datasheet)

Datasheets & Resources

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