IRFL014NTRPBF vs IRF7832TRPBF Comparison
Detailed side-by-side comparison of IRFL014NTRPBF by Infineon and IRF7832TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF β Active
Specification Comparison
| Parameter | IRFL014NTRPBF | IRF7832TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.30 | $0.92 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at 25 C | 1.9 A | β |
| Continuous Drain Current (ID) at 70 C | [DATA_NEEDED: ID at 70 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 160 milliohm | β |
| Gate Charge (Qg) typical | 7 nC | β |
| Threshold Voltage VGS(th) typical | [DATA_NEEDED: VGS(th)] | β |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 C to +150 C (TJ) |
| Package | SOT-223 (TO-261-4), 4-pin (3 + tab) | 8-SO (SOIC-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| dv/dt Rating | Yes (dynamic dv/dt rated) | β |
| Lead-Free / RoHS | Yes / Compliant | β |
| MSL Level | Level 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | HEXFET (planar N-channel, fifth generation) | HEXFET (trench MOSFET) |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF7832TRPBF |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 20 A |
| On-Resistance RDS(on) max at VGS=10V | β | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | β | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | β | 34 nC |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |