IRFL014NTRPBF vs IRFR5305TRLPBF Comparison
Detailed side-by-side comparison of IRFL014NTRPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF β Active
Specification Comparison
| Parameter | IRFL014NTRPBF | IRFR5305TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.30 | $0.38 |
| FET Type | N-Channel MOSFET, Metal Oxide | β |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at 25 C | 1.9 A | β |
| Continuous Drain Current (ID) at 70 C | [DATA_NEEDED: ID at 70 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 160 milliohm | β |
| Gate Charge (Qg) typical | 7 nC | β |
| Threshold Voltage VGS(th) typical | [DATA_NEEDED: VGS(th)] | β |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper | β |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| Package | SOT-223 (TO-261-4), 4-pin (3 + tab) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | Yes (fully avalanche rated) |
| dv/dt Rating | Yes (dynamic dv/dt rated) | β |
| Lead-Free / RoHS | Yes / Compliant | Yes (Pb-free, suffix "PBF") |
| MSL Level | Level 1 (per JEDEC J-STD-020) | β |
| Technology | HEXFET (planar N-channel, fifth generation) | HEXFET fifth-generation planar MOSFET |
| Polarity / Channel Type | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at Tc=25C | β | -31 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max at VGS=-10V | β | 65 mΞ© |
| RDS(on) max at VGS=-5V | β | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) range] |
| Power Dissipation (PD) at Tc=25C | β | 110 W |
| Operating Junction Temperature | β | -55C to +175C |
| Tape & Reel Orientation | β | Left orientation (TRLPBF = Tape & Reel, Left) |