IRFP1405PBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFP1405PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFP1405PBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.92 | $1.62 |
| FET Type | N-Channel | β |
| Technology | HEXFET (Planar cell) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (V_DSS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc=25Β°C | 95 A | β |
| Continuous Drain Current (I_D) at Tc=100Β°C | [DATA_NEEDED: I_D at Tc=100Β°C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) at VGS=10V | 5.3 mΞ© (typical per distributor listing) | β |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical] | β |
| Maximum Power Dissition at Tc=25Β°C | 310 W | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | TO-247AC (through-hole) | TO-220AB (3-lead through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant (Pb-free suffix PBF) | β |
| Qualification | JEDEC standard (industrial grade) | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| MSL Level | β | N/A (through-hole) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |