IRFP250MPBF vs IRF150P220AKMA1 Comparison

Detailed side-by-side comparison of IRFP250MPBF by Infineon and IRF150P220AKMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP250MPBF IRF150P220AKMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.55 $3.55
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP250MPBF IRF150P220AKMA1
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) StrongIRFET
Drain-Source Voltage (Vds) 200 V β€”
Continuous Drain Current (Id) at Tc=25C 30 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] β€”
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V β€”
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) β€”
Total Gate Charge (Qg) 82 nC β€”
Power Dissipation (Pd) at Tc=25C 214 W 556 W
Operating Junction Temperature -55C to +175C β€”
Package / Case TO-247AC (3-pin + tab) β€”
Mounting Type Through Hole Through Hole
Number of Pins 3 β€”
Avalanche Rated Yes β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level 1 (unlimited) β€”
Drain-Source Voltage (VDS max) β€” 150 V
Continuous Drain Current (ID) at Tc=25C β€” 203 A
On-Resistance (RDS(on) max) at VGS=10V β€” 2.7 mOhm
Gate-Source Voltage (VGS max) β€” [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Ta=25C β€” 3.8 W
Operating Temperature Range β€” -55C to +175C
Package β€” TO-247-3 (PG-TO247-3)
Terminal Finish β€” Tin (Sn)
JESD-609 Code β€” e3

Datasheets & Resources

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