IRFP250MPBF vs IRF3710STRLPBF Comparison

Detailed side-by-side comparison of IRFP250MPBF by Infineon and IRF3710STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP250MPBF IRF3710STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.55 $1.23
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRFP250MPBF β€”
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) HEXFET / IR MOSFET (planar)
Drain-Source Voltage (Vds) 200 V β€”
Continuous Drain Current (Id) at Tc=25C 30 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] β€”
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V β€”
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) β€”
Total Gate Charge (Qg) 82 nC 86.7 nC
Power Dissipation (Pd) at Tc=25C 214 W β€”
Operating Junction Temperature -55C to +175C β€”
Package / Case TO-247AC (3-pin + tab) β€”
Mounting Type Through Hole Surface Mount
Number of Pins 3 β€”
Avalanche Rated Yes β€”
RoHS Status Compliant Compliant (Pb-free)
Lead-Free Yes Yes
MSL Level 1 (unlimited) β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc=25 C) β€” 57 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max β€” 23 mOhm
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max]
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc=25 C) β€” 200 W
Operating Temperature Range β€” -55 C to +175 C
Package β€” D2PAK (TO-263), surface mount
Tape & Reel Orientation β€” TRL (left)

Datasheets & Resources

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