IRFP250MPBF vs STW45NM50 Comparison

Detailed side-by-side comparison of IRFP250MPBF by Infineon and STW45NM50 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STW45NM50 STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 βœ“ Active

Specification Comparison

Parameter IRFP250MPBF STW45NM50
Brand Infineon STMicroelectronics
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.55 $9.55
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRFP250MPBF β€”
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) β€”
Drain-Source Voltage (Vds) 200 V β€”
Continuous Drain Current (Id) at Tc=25C 30 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] β€”
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V β€”
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) β€”
Total Gate Charge (Qg) 82 nC β€”
Power Dissipation (Pd) at Tc=25C 214 W β€”
Operating Junction Temperature -55C to +175C β€”
Package / Case TO-247AC (3-pin + tab) β€”
Mounting Type Through Hole Through Hole
Number of Pins 3 β€”
Avalanche Rated Yes β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level 1 (unlimited) β€”
Polarity β€” N-Channel
Drain-Source Voltage (VDS) β€” 500 V
Continuous Drain Current (ID) at 25Β°C β€” 45 A
Continuous Drain Current (ID) at 100Β°C β€” 30 A
Pulsed Drain Current (IDM) β€” 180 A
Gate-Source Voltage (VGS) β€” Β±30 V
On-Resistance (RDS(on)) β€” 0.09 ohm
Gate Charge (Qg) β€” 120 nC
Avalanche Energy (EAS) β€” 1.2 J
Power Dissipation (PD) β€” 450 W
Operating Temperature Range β€” -55Β°C to +150Β°C
Package β€” TO-247
Halogen Free β€” Yes

Datasheets & Resources

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