IRFP260MPBF vs STW45NM50 Comparison
Detailed side-by-side comparison of IRFP260MPBF by Infineon and STW45NM50 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 β ActiveSpecification Comparison
| Parameter | IRFP260MPBF | STW45NM50 |
|---|---|---|
| Brand | Infineon | STMicroelectronics |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.85 | $9.55 |
| Manufacturer | Infineon Technologies | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide Semiconductor) | β |
| Drain-Source Voltage (VDS) | 200 V | 500 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 180 A |
| Power Dissipation (PD) at Tc=25C | 300 W | β |
| On-Resistance RDS(on) max | 40 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | β |
| Input Capacitance Ciss | 1560 pF | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg] | β |
| Operating Temperature Range | -55C to +175C | -55Β°C to +150Β°C |
| Package / Case | TO-247AC (3-lead through-hole) | β |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| MSL Level | Not Applicable (through-hole) | β |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at 25Β°C | β | 45 A |
| Continuous Drain Current (ID) at 100Β°C | β | 30 A |
| Gate-Source Voltage (VGS) | β | Β±30 V |
| On-Resistance (RDS(on)) | β | 0.09 ohm |
| Gate Charge (Qg) | β | 120 nC |
| Avalanche Energy (EAS) | β | 1.2 J |
| Power Dissipation (PD) | β | 450 W |
| Package | β | TO-247 |
| Halogen Free | β | Yes |