IRFP2907PBF vs IRF150P220AKMA1 Comparison

Detailed side-by-side comparison of IRFP2907PBF by Infineon and IRF150P220AKMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP2907PBF IRF150P220AKMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.45 $3.55
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP2907PBF IRF150P220AKMA1
Technology HEXFET Stripe Planar DMOS (N-Channel) StrongIRFET
Drain-to-Source Voltage (V_DSS) 75 V β€”
Continuous Drain Current (I_D) at T_C = 25 C 209 A β€”
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V β€”
Power Dissipation (P_D) at T_C = 25 C 470 W β€”
Total Gate Charge (Q_g) 410 nC β€”
Maximum Junction Operating Temperature +175 C β€”
Package / Mounting Type TO-247AC (Through Hole) β€”
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Compliance Yes (Pb-free) β€”
Avalanche Rated Yes (repetitive avalanche rated) β€”
Body Diode Integral (no external anti-parallel diode required) β€”
Lead-Free Yes Yes
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS max) β€” 150 V
Continuous Drain Current (ID) at Tc=25C β€” 203 A
On-Resistance (RDS(on) max) at VGS=10V β€” 2.7 mOhm
Gate-Source Voltage (VGS max) β€” [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C β€” 556 W
Power Dissipation (Pd) at Ta=25C β€” 3.8 W
Operating Temperature Range β€” -55C to +175C
Package β€” TO-247-3 (PG-TO247-3)
Mounting Type β€” Through Hole
Terminal Finish β€” Tin (Sn)
JESD-609 Code β€” e3
RoHS Status β€” Compliant

Datasheets & Resources

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