IRFP2907PBF vs IRFB4110PBF Comparison

Detailed side-by-side comparison of IRFP2907PBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP2907PBF IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.45 $1.55
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRFP2907PBF β€”
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (planar DMOS)
Drain-to-Source Voltage (V_DSS) 75 V β€”
Continuous Drain Current (I_D) at T_C = 25 C 209 A β€”
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V β€”
Power Dissipation (P_D) at T_C = 25 C 470 W β€”
Total Gate Charge (Q_g) 410 nC β€”
Maximum Junction Operating Temperature +175 C β€”
Package / Mounting Type TO-247AC (Through Hole) β€”
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Compliance Yes (Pb-free) β€”
Avalanche Rated Yes (repetitive avalanche rated) β€”
Body Diode Integral (no external anti-parallel diode required) β€”
Lead-Free Yes Yes (PBF suffix denotes Pb-free)
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A (bond-wire limited)
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V β€” 4.5 mΞ©
On-Resistance RDS(on) typ at VGS=10V β€” 3.7 mΞ©
Power Dissipation (PD) at TC=25Β°C β€” 370 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Package β€” TO-220AB (through-hole)
Mounting Type β€” Through Hole
RoHS Status β€” Compliant (Pb-free suffix)

Datasheets & Resources

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