IRFP2907PBF vs IRFP250MPBF Comparison

Detailed side-by-side comparison of IRFP2907PBF by Infineon and IRFP250MPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP2907PBF IRFP250MPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.45 $2.55
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRFP2907PBF IRFP250MPBF
Technology HEXFET Stripe Planar DMOS (N-Channel) HEXFET (IR MOSFET)
Drain-to-Source Voltage (V_DSS) 75 V β€”
Continuous Drain Current (I_D) at T_C = 25 C 209 A β€”
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V β€”
Power Dissipation (P_D) at T_C = 25 C 470 W β€”
Total Gate Charge (Q_g) 410 nC β€”
Maximum Junction Operating Temperature +175 C β€”
Package / Mounting Type TO-247AC (Through Hole) β€”
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Compliance Yes (Pb-free) β€”
Avalanche Rated Yes (repetitive avalanche rated) Yes
Body Diode Integral (no external anti-parallel diode required) β€”
Lead-Free Yes Yes
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (Vds) β€” 200 V
Continuous Drain Current (Id) at Tc=25C β€” 30 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) β€” 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) β€” 4 V (typ)
Total Gate Charge (Qg) β€” 82 nC
Power Dissipation (Pd) at Tc=25C β€” 214 W
Operating Junction Temperature β€” -55C to +175C
Package / Case β€” TO-247AC (3-pin + tab)
Mounting Type β€” Through Hole
Number of Pins β€” 3
RoHS Status β€” Compliant
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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