IRFP3710PBF vs IRFB4020PBF Comparison
Detailed side-by-side comparison of IRFP3710PBF by Infineon and IRFB4020PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFP3710PBF | IRFB4020PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $1.38 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Series | HEXFET, Fifth Generation | β |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) | 57 A (Tc) | β |
| Power Dissipation (PD) | 200 W (Tc) | β |
| On-Resistance RDS(on) Max | 25 mOhm at VGS = 10 V | β |
| Gate Charge (Qg) Typical | 66.7 nC | β |
| Gate-to-Source Voltage Max | Β±20 V | β |
| Operating Temperature Range | -55C to +175C (Tj) | β |
| Package | TO-247AC (3-pin + tab) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Rating | Fully Avalanche Rated | β |
| dv/dt Rating | Dynamic dv/dt Rated | β |
| Lead-Free | Yes | β |
| RoHS Status | Compliant | β |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID) at TC | β | 18 A |
| Power Dissipation (PD) at TC | β | 100 W |
| RDS(on) Maximum | β | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | β | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 1.43 C/W |
| Operating Junction Temperature | β | 175 C (max) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | β | Yes |
| Market Qualification | β | Consumer |
| Recommended Use | β | Class-D audio amplifier and high-efficiency switching applications |