IRFR1018ETRPBF vs BSC010NE2LSIATMA1 Comparison
Detailed side-by-side comparison of IRFR1018ETRPBF by Infineon and BSC010NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR1018ETRPBF | BSC010NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.92 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 79 A (Tc) | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Rds(on) Max @ Vgs=10V | 8.4 mΞ© | β |
| Rds(on) Max @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 46 nC | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Maximum Power Dissipation (Pd) | 110 W (Tc) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +150C (TJ) |
| Package | TO-252AA (D-Pak) | PG-TDSON-8-7 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET | OptiMOS (Trench) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series / Family | β | OptiMOS 25V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 96 W |
| Configuration | β | Single N-Channel |
| Pin Count | β | 8 |
| Gate Drive | β | Logic-level compatible |
| Rds(on) at 10V | β | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | β | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |