IRFR1018ETRPBF vs IPD042P03L3GATMA1 Comparison
Detailed side-by-side comparison of IRFR1018ETRPBF by Infineon and IPD042P03L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR1018ETRPBF | IPD042P03L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.28 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 79 A (Tc) | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Rds(on) Max @ Vgs=10V | 8.4 mΞ© | β |
| Rds(on) Max @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 46 nC | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Maximum Power Dissipation (Pd) | 110 W (Tc) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55Β°C to +175Β°C (TJ) |
| Package | TO-252AA (D-Pak) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET | OptiMOSβ’ P (Trench) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 | 1 |
| Avalanche Rated | Yes | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | -70 A |
| Pulsed Drain Current (IDM) | β | -280 A |
| RDS(on) max @ VGS = -10 V | β | 4.2 mΞ© |
| RDS(on) max @ VGS = -4.5 V | β | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | β | -1.5 V (typ) |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25Β°C) | β | 150 W |
| Single-Pulse Avalanche Energy (EAS) | β | 290 mJ |