IRFR1018ETRPBF vs IRFR5410TRPBF Comparison

Detailed side-by-side comparison of IRFR1018ETRPBF by Infineon and IRFR5410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR1018ETRPBF IRFR5410TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.71
FET Type N-Channel β€”
Drain-to-Source Voltage (Vdss) 60 V β€”
Continuous Drain Current (Id) 79 A (Tc) β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Rds(on) Max @ Vgs=10V 8.4 mΞ© β€”
Rds(on) Max @ Vgs=4.5V [DATA_NEEDED: Rds(on) at 4.5V] β€”
Gate Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 46 nC β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Output Capacitance (Coss) [DATA_NEEDED: Coss] β€”
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] β€”
Maximum Power Dissipation (Pd) 110 W (Tc) β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55 Β°C to +150 Β°C (TJ)
Package TO-252AA (D-Pak) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET HEXFET (advanced process, Gen 5)
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level 1 [DATA_NEEDED: MSL rating]
Avalanche Rated Yes Yes (fully avalanche rated)
Polarity β€” P-Channel
Drain-Source Voltage (VDS) β€” -100 V
Continuous Drain Current (ID) at TC = 25 Β°C β€” -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V β€” 205 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Total Gate Charge (Qg) typ β€” 70 nC
Power Dissition (PD) at TC = 25 Β°C β€” 66 W
Lead-Free / RoHS Status β€” Lead-free, RoHS compliant (PBF suffix)
RDS(on) Test Conditions β€” VGS = -10 V, ID = -7.0 A

Datasheets & Resources

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