IRFR1205TRPBF vs BSP88H6327XTSA1 Comparison

Detailed side-by-side comparison of IRFR1205TRPBF by Infineon and BSP88H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 βœ“ Active

Specification Comparison

Parameter IRFR1205TRPBF BSP88H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.21
FET Type N-Channel β€”
Technology HEXFET (IR MOSFET, 5th generation) SIPMOS (planar enhancement mode)
Drain-Source Voltage (VDS) 55 V 240 V
Continuous Drain Current (ID) at TC=25C 44 A β€”
Pulsed Drain Current (IDM) 160 A β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) min/typ/max]
On-Resistance RDS(on) at VGS=10V 27 mOhm max β€”
Total Gate Charge (Qg) 43.3 nC [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C 107 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) PG-SOT223-4 (SOT-223-3)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix = lead-free) β€”
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) β€” 350 mA at Ta=25 C
Power Dissipation (PD) β€” 1.8 W at Ta=25 C
On-State Resistance (RDS(on)) β€” 6 ohm typical at VGS=10 V
Configuration β€” Single
Operating Temperature β€” -55 C to +150 C
Automotive Qualification β€” AEC-Q101 qualified
Lead Plating β€” Pb-free
RoHS Compliance β€” Compliant
MSL Level β€” [DATA_NEEDED: MSL level]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Drain Tab Connection β€” SOT-223 tab is drain

Datasheets & Resources

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