IRFR1205TRPBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRFR1205TRPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR1205TRPBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.38
FET Type N-Channel β€”
Technology HEXFET (IR MOSFET, 5th generation) HEXFET fifth-generation planar MOSFET
Drain-Source Voltage (VDS) 55 V -55 V
Continuous Drain Current (ID) at TC=25C 44 A β€”
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V Β±20 V
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) range]
On-Resistance RDS(on) at VGS=10V 27 mOhm max β€”
Total Gate Charge (Qg) 43.3 nC β€”
Power Dissition (PD) at TC=25C 107 W β€”
Operating Junction Temperature -55C to +175C -55C to +175C
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix = lead-free) β€”
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] β€”
Polarity / Channel Type β€” P-Channel
Continuous Drain Current (ID) at Tc=25C β€” -31 A
RDS(on) max at VGS=-10V β€” 65 mΞ©
RDS(on) max at VGS=-5V β€” [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C β€” 110 W
Avalanche Rated β€” Yes (fully avalanche rated)
Lead-Free / RoHS β€” Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation β€” Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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