IRFR1205TRPBF vs IRFR5305TRPBF Comparison

Detailed side-by-side comparison of IRFR1205TRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF βœ“ Active

Specification Comparison

Parameter IRFR1205TRPBF IRFR5305TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.32
FET Type N-Channel β€”
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at TC=25C 44 A 31 A
Pulsed Drain Current (IDM) 160 A β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max β€”
On-Resistance RDS(on) at VGS=10V 27 mOhm max β€”
Total Gate Charge (Qg) 43.3 nC β€”
Power Dissition (PD) at TC=25C 107 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (PBF suffix = lead-free) Compliant (Pb-free PBF suffix)
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) Max β€” -55 V
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V β€” 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) β€” -2 V to -4 V
Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C β€” 110 W
Single-Pulse Avalanche Energy (EAS) β€” 270 mJ
Operating Temperature Range β€” -55 C to +175 C
MSL Level β€” 1
Lead-Free Finish β€” Yes (PBF suffix)

Datasheets & Resources

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