IRFR120NTRPBF vs IRFL014NTRPBF Comparison
Detailed side-by-side comparison of IRFR120NTRPBF by Infineon and IRFL014NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF β ActiveSpecification Comparison
| Parameter | IRFR120NTRPBF | IRFL014NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.30 |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | β |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | β |
| Total Gate Charge (Qg) typical | 16.7 nC | β |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Operating Junction Temperature Range | -55C to +175C | β |
| Package | TO-252AA (DPAK) | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (planar N-channel, fifth generation) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | β |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | β |
| FET Type | β | N-Channel MOSFET, Metal Oxide |
| Continuous Drain Current (ID) at 25 C | β | 1.9 A |
| Continuous Drain Current (ID) at 70 C | β | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 160 milliohm |
| Gate Charge (Qg) typical | β | 7 nC |
| Threshold Voltage VGS(th) typical | β | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | β | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Operating Temperature Range | β | -55 C to +150 C (junction) |
| Avalanche Rated | β | Yes (fully avalanche rated) |
| dv/dt Rating | β | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | β | Yes / Compliant |
| MSL Level | β | Level 1 (per JEDEC J-STD-020) |