IRFR120NTRPBF vs IRFR5305TRPBF Comparison
Detailed side-by-side comparison of IRFR120NTRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR120NTRPBF | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.32 |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | 31 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | β |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | β |
| Total Gate Charge (Qg) typical | 16.7 nC | β |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Operating Junction Temperature Range | -55C to +175C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (IR MOSFET) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | β |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) Max | β | -55 V |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | β | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | -2 V to -4 V |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | β | 110 W |
| Single-Pulse Avalanche Energy (EAS) | β | 270 mJ |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | β | Yes (PBF suffix) |