IRFR120NTRPBF vs IRFR5410TRPBF Comparison
Detailed side-by-side comparison of IRFR120NTRPBF by Infineon and IRFR5410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFR5410TRPBF - -100V P-Channel HEXFET MOSFET, 13A, DPAK | Infineon
IRFR5410TRPBF β ActiveSpecification Comparison
| Parameter | IRFR120NTRPBF | IRFR5410TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.71 |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | β |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | β |
| Total Gate Charge (Qg) typical | 16.7 nC | β |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Operating Junction Temperature Range | -55C to +175C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (advanced process, Gen 5) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | β |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | Lead-free, RoHS compliant (PBF suffix) |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -100 V |
| Continuous Drain Current (ID) at TC = 25 Β°C | β | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | β | 205 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Total Gate Charge (Qg) typ | β | 70 nC |
| Power Dissition (PD) at TC = 25 Β°C | β | 66 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (TJ) |
| Avalanche Rated | β | Yes (fully avalanche rated) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | β | VGS = -10 V, ID = -7.0 A |