IRFR120NTRPBF vs IRFR9120NTRPBF Comparison
Detailed side-by-side comparison of IRFR120NTRPBF by Infineon and IRFR9120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR120NTRPBF | IRFR9120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.32 |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | -6.6 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | β |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | β |
| Total Gate Charge (Qg) typical | 16.7 nC | β |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Operating Junction Temperature Range | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET fifth-generation IR MOSFET |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | β |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -100 V |
| On-Resistance (RDS(on)) max at VGS=-10V | β | 480 milliohm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | β | 40 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC] |
| MSL Level | β | 1 (unlimited floor life) |
| Lead Finish / Plating | β | Pb-free (PBF suffix), Matte Tin |
| RoHS Status | β | Compliant |
| Moisture Sensitivity | β | MSL1 per JEDEC J-STD-020 |