IRFR120NTRPBF vs IRLR120NTRPBF Comparison
Detailed side-by-side comparison of IRFR120NTRPBF by Infineon and IRLR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR120NTRPBF | IRLR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.27 |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | β |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | β |
| Total Gate Charge (Qg) typical | 16.7 nC | β |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Operating Junction Temperature Range | -55C to +175C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK), 3-pin surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (Fifth Generation, planar) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | β |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | β |
| FET Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) at Tc=25C | β | 10 A |
| Continuous Drain Current (Id) at Tc=100C | β | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed Idm] |
| Rds(on) Max at Vgs=10V | β | 185 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: typical Vgs(th)] |
| Total Gate Charge (Qg) | β | 13.3 nC |
| Power Dissipation (Pd) at Tc=25C | β | 48 W |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Avalanche Energy Rating | β | Fully avalanche rated |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates lead-free) |
| MSL Level | β | 1 |