IRFR220NPBF vs IRFR220NTRLPBF Comparison
Detailed side-by-side comparison of IRFR220NPBF by Infineon and IRFR220NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR220NPBF | IRFR220NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.22 |
| FET Type | N-Channel MOSFET, Metal Oxide | β |
| Drain-to-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC=25C | 5 A | β |
| Power Dissipation (PD) at TC=25C | 43 W | β |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-252AA (DPAK) | β |
| Technology | HEXFET (Planar) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: total gate charge Qg] |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | β |
| Avalanche Energy Rated | Yes (per datasheet characterization) | β |
| Pin Count | 3 (Gate, Drain, Source) plus tab | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Polarity | β | N-Channel |
| Mode | β | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 200 V |
| Continuous Drain Current (Id) at Tc=25C | β | 5 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | β | 0.800 ohm (max) |
| Gate-to-Drain Charge (Qgd) | β | Low (per datasheet - HEXFET design) |
| Power Dissipation (Pd) at Tc=25C | β | 43 W |
| Package | β | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| RoHS Status | β | Compliant (Pb-free PBF suffix) |
| Packaging | β | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | β | Yes (HEXFET ruggedized design) |
| Technology Family | β | HEXFET, Planar, Generation 3 |