IRFR220NPBF vs IRFR2405TRLPBF Comparison
Detailed side-by-side comparison of IRFR220NPBF by Infineon and IRFR2405TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR220NPBF | IRFR2405TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.55 |
| FET Type | N-Channel MOSFET, Metal Oxide | β |
| Drain-to-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC=25C | 5 A | β |
| Power Dissipation (PD) at TC=25C | 43 W | β |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-252AA (DPAK) | β |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET, 7th generation) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C (junction) |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Avalanche Energy Rated | Yes (per datasheet characterization) | Yes (HEXFET ruggedized design) |
| Pin Count | 3 (Gate, Drain, Source) plus tab | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at Tc | β | 56 A |
| Pulsed Drain Current (IDM) | β | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | β | 16 mOhm |
| Gate Charge (Qg) typical | β | 70 nC |
| Power Dissipation (PD) at Tc | β | 110 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Package | β | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Packaging | β | Tape & Reel (TR) |