IRFR220NPBF vs IRFR4620TRLPBF Comparison

Detailed side-by-side comparison of IRFR220NPBF by Infineon and IRFR4620TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR220NPBF IRFR4620TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $1.72
FET Type N-Channel MOSFET, Metal Oxide β€”
Drain-to-Source Voltage (VDS) 200 V β€”
Continuous Drain Current (ID) at TC=25C 5 A β€”
Power Dissipation (PD) at TC=25C 43 W β€”
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V β€”
Mounting Type Surface Mount Surface Mount
Package / Case TO-252AA (DPAK) TO-252AA (DPAK)
Technology HEXFET (Planar) IR MOSFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Operating Temperature Range -55C to +150C (junction) β€”
Lead-Free / RoHS Yes, lead-free (PBF suffix) β€”
Avalanche Energy Rated Yes (per datasheet characterization) β€”
Pin Count 3 (Gate, Drain, Source) plus tab β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (Unlimited)
Manufacturer β€” Infineon Technologies
Part Number β€” IRFR4620TRLPBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) β€” 24 A at Tc
On-Resistance (RDS(on)) β€” 78 mOhm max at VGS=10V
Gate Charge (Qg) β€” 25 nC typical
Power Dissipation (PD) β€” 144 W at Tc
Operating Temperature β€” -55C to +175C
Lead Free β€” Yes
RoHS Status β€” Compliant

Datasheets & Resources

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