IRFR220NPBF vs IRFZ24NPBF Comparison
Detailed side-by-side comparison of IRFR220NPBF by Infineon and IRFZ24NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR220NPBF | IRFZ24NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.46 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 5 A | 17 A |
| Power Dissipation (PD) at TC=25C | 43 W | 45 W |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | β |
| Mounting Type | Surface Mount | Through Hole |
| Package / Case | TO-252AA (DPAK) | β |
| Technology | HEXFET (Planar) | HEXFET planar cell |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 13.3 nC |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | β |
| Avalanche Energy Rated | Yes (per datasheet characterization) | β |
| Pin Count | 3 (Gate, Drain, Source) plus tab | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | β | Β± 20 V |
| RDS(on) at VGS=10V | β | 70 mOhm (max) |
| Operating Junction Temperature | β | -55C to +175C |
| Package | β | TO-220AB (through hole) |
| Switching Frequency Range | β | Optimized for < 100 kHz |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes (PBF suffix) |
| Qualification | β | JEDEC standard |
| Channel Mode | β | Enhancement |