IRFR220NPBF vs IRLR120NTRPBF Comparison
Detailed side-by-side comparison of IRFR220NPBF by Infineon and IRLR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR220NPBF | IRLR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.27 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC=25C | 5 A | β |
| Power Dissipation (PD) at TC=25C | 43 W | β |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-252AA (DPAK) | β |
| Technology | HEXFET (Planar) | HEXFET (Fifth Generation, planar) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 13.3 nC |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +175C (junction) |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | Yes (PBF suffix indicates lead-free) |
| Avalanche Energy Rated | Yes (per datasheet characterization) | β |
| Pin Count | 3 (Gate, Drain, Source) plus tab | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Drain-to-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) at Tc=25C | β | 10 A |
| Continuous Drain Current (Id) at Tc=100C | β | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed Idm] |
| Rds(on) Max at Vgs=10V | β | 185 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: typical Vgs(th)] |
| Power Dissipation (Pd) at Tc=25C | β | 48 W |
| Package | β | TO-252AA (DPAK), 3-pin surface mount |
| Avalanche Energy Rating | β | Fully avalanche rated |