IRFR220NTRLPBF vs IRFR220NTRPBF Comparison
Detailed side-by-side comparison of IRFR220NTRLPBF by Infineon and IRFR220NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR220NTRLPBF | IRFR220NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.22 |
| Polarity | N-Channel | β |
| Mode | Enhancement | β |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 200 V | β |
| Continuous Drain Current (Id) at Tc=25C | 5 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Static Drain-Source On-Resistance (RDS(on)) | 0.800 ohm (max) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 15 nC (typical per Mouser listing) |
| Gate-to-Drain Charge (Qgd) | Low (per datasheet - HEXFET design) | β |
| Power Dissipation (Pd) at Tc=25C | 43 W | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | TO-252AA (DPAK), 2 Leads + Tab, SC-63 | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant (PBF suffix) |
| Packaging | Tape & Reel (Left orientation - TRLPBF) | β |
| Avalanche Rated | Yes (HEXFET ruggedized design) | β |
| Technology Family | HEXFET, Planar, Generation 3 | β |
| FET Type | β | N-Channel MOSFET |
| Technology | β | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 5 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| On-Resistance Rds(on) max at VGS=10V | β | 600 milliohm |
| Maximum Power Dissition (PD) at TC=25Β°C | β | 43 W |
| Operating Junction Temperature | β | -55Β°C to +150Β°C |
| Avalanche Energy Rated | β | Yes (fully characterized) |
| Lead-Free | β | Yes (PBF suffix indicates Pb-free plating) |