IRFR220NTRLPBF vs IRFR4620TRLPBF Comparison

Detailed side-by-side comparison of IRFR220NTRLPBF by Infineon and IRFR4620TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR220NTRLPBF IRFR4620TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.22 $1.72
Polarity N-Channel β€”
Mode Enhancement β€”
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V β€”
Continuous Drain Current (Id) at Tc=25C 5 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] β€”
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) β€”
Power Dissipation (Pd) at Tc=25C 43 W β€”
Operating Temperature Range -55C to +150C (junction) β€”
Package TO-252AA (DPAK), 2 Leads + Tab, SC-63 β€”
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (Unlimited)
RoHS Status Compliant (Pb-free PBF suffix) Compliant
Packaging Tape & Reel (Left orientation - TRLPBF) β€”
Avalanche Rated Yes (HEXFET ruggedized design) β€”
Technology Family HEXFET, Planar, Generation 3 β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IRFR4620TRLPBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) β€” 24 A at Tc
On-Resistance (RDS(on)) β€” 78 mOhm max at VGS=10V
Gate Charge (Qg) β€” 25 nC typical
Power Dissipation (PD) β€” 144 W at Tc
Technology β€” IR MOSFET
Package / Case β€” TO-252AA (DPAK)
Operating Temperature β€” -55C to +175C
Lead Free β€” Yes

Datasheets & Resources

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