IRFR220NTRPBF vs IRFR1205TRPBF Comparison

Detailed side-by-side comparison of IRFR220NTRPBF by Infineon and IRFR1205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF βœ“ Active

Specification Comparison

Parameter IRFR220NTRPBF IRFR1205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.22 $0.49
FET Type N-Channel MOSFET N-Channel
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 5th generation)
Drain-to-Source Voltage (VDS) 200 V β€”
Continuous Drain Current (ID) at TC=25Β°C 5 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2 V min, 4 V max
On-Resistance Rds(on) max at VGS=10V 600 milliohm β€”
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) 43.3 nC
Maximum Power Dissition (PD) at TC=25Β°C 43 W β€”
Operating Junction Temperature -55Β°C to +150Β°C -55C to +175C
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life per JEDEC J-STD-020) β€”
RoHS Status Compliant (PBF suffix) Compliant (PBF suffix = lead-free)
Avalanche Energy Rated Yes (fully characterized) β€”
Lead-Free Yes (PBF suffix indicates Pb-free plating) β€”
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at TC=25C β€” 44 A
Gate-Source Voltage (VGS) max β€” +/- 20 V
On-Resistance RDS(on) at VGS=10V β€” 27 mOhm max
Power Dissition (PD) at TC=25C β€” 107 W
Lead-Free / Halogen-Free β€” Yes / [DATA_NEEDED: halogen status]

Datasheets & Resources

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