IRFR220NTRPBF vs IRFR120NTRPBF Comparison
Detailed side-by-side comparison of IRFR220NTRPBF by Infineon and IRFR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR220NTRPBF | IRFR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.26 |
| FET Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET fifth generation) |
| Drain-to-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | 5 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm | β |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) | β |
| Maximum Power Dissition (PD) at TC=25Β°C | 43 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited floor life per JEDEC J-STD-020) | β |
| RoHS Status | Compliant (PBF suffix) | β |
| Avalanche Energy Rated | Yes (fully characterized) | β |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) | β |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | β | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | β | 16.7 nC |
| Gate-to-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss] |
| Operating Junction Temperature Range | β | -55C to +175C |
| Channel Type | β | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | β | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | β | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | β | Lead-Free, RoHS Compliant |