IRFR2405TRLPBF vs IRFR220NPBF Comparison

Detailed side-by-side comparison of IRFR2405TRLPBF by Infineon and IRFR220NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR2405TRLPBF IRFR220NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.74
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET, 7th generation) HEXFET (Planar)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc 56 A β€”
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) β€”
On-Resistance RDS(on) max @ VGS=10V 16 mOhm β€”
Gate Charge (Qg) typical 70 nC β€”
Power Dissipation (PD) at Tc 110 W β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Operating Temperature Range -55 C to +175 C (junction) -55C to +150C (junction)
Package TO-252AA (DPAK), 3-pin (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) Yes (per datasheet characterization)
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant Yes, lead-free (PBF suffix)
Packaging Tape & Reel (TR) β€”
FET Type β€” N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at TC=25C β€” 5 A
Power Dissipation (PD) at TC=25C β€” 43 W
Static Drain-Source On-Resistance (RDS(on)) max β€” 0.6 ohm at VGS = 10 V
Package / Case β€” TO-252AA (DPAK)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Pin Count β€” 3 (Gate, Drain, Source) plus tab
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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