IRFR2405TRLPBF vs IRFR4620TRLPBF Comparison

Detailed side-by-side comparison of IRFR2405TRLPBF by Infineon and IRFR4620TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR2405TRLPBF IRFR4620TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $1.72
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET, 7th generation) IR MOSFET
Drain-Source Voltage (VDS) 55 V 200 V
Continuous Drain Current (ID) at Tc 56 A β€”
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) β€”
On-Resistance RDS(on) max @ VGS=10V 16 mOhm β€”
Gate Charge (Qg) typical 70 nC β€”
Power Dissipation (PD) at Tc 110 W β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Operating Temperature Range -55 C to +175 C (junction) β€”
Package TO-252AA (DPAK), 3-pin (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) β€”
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant β€”
Packaging Tape & Reel (TR) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IRFR4620TRLPBF
Continuous Drain Current (ID) β€” 24 A at Tc
On-Resistance (RDS(on)) β€” 78 mOhm max at VGS=10V
Gate Charge (Qg) β€” 25 nC typical
Power Dissipation (PD) β€” 144 W at Tc
Package / Case β€” TO-252AA (DPAK)
Operating Temperature β€” -55C to +175C
Lead Free β€” Yes
RoHS Status β€” Compliant
MSL Level β€” 1 (Unlimited)

Datasheets & Resources

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