IRFR2405TRPBF vs IRFR1205TRPBF Comparison
Detailed side-by-side comparison of IRFR2405TRPBF by Infineon and IRFR1205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR2405TRPBF | IRFR1205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Part Status | Active | β |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2 V min, 4 V max |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | β |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | β |
| Total Gate Charge (Qg) | 70 nC | 43.3 nC |
| Power Dissipation (PD) at Tc=25C | 110 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + Tab | β |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Lead-Free PBF suffix) | Compliant (PBF suffix = lead-free) |
| Halogen-Free | [DATA_NEEDED: halogen-free status] | β |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Continuous Drain Current (ID) at TC=25C | β | 44 A |
| On-Resistance RDS(on) at VGS=10V | β | 27 mOhm max |
| Power Dissition (PD) at TC=25C | β | 107 W |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen status] |