IRFR2405TRPBF vs IRFR120NTRPBF Comparison
Detailed side-by-side comparison of IRFR2405TRPBF by Infineon and IRFR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR2405TRPBF | IRFR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.26 |
| Manufacturer | Infineon Technologies | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET fifth generation) |
| Drain-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at Tc=25C | 56 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | β |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | β |
| Total Gate Charge (Qg) | 70 nC | β |
| Power Dissipation (PD) at Tc=25C | 110 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) + Tab | β |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Lead-Free PBF suffix) | β |
| Halogen-Free | [DATA_NEEDED: halogen-free status] | β |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | β | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | β | 16.7 nC |
| Gate-to-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss] |
| Operating Junction Temperature Range | β | -55C to +175C |
| Channel Type | β | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | β | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | β | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | β | Lead-Free, RoHS Compliant |