IRFR2405TRPBF vs IRFR220NTRPBF Comparison

Detailed side-by-side comparison of IRFR2405TRPBF by Infineon and IRFR220NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF βœ“ Active
Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF βœ“ Active

Specification Comparison

Parameter IRFR2405TRPBF IRFR220NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.22
Manufacturer Infineon Technologies β€”
Part Status Active β€”
FET Type N-Channel N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 56 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V 16 mOhm β€”
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] β€”
Total Gate Charge (Qg) 70 nC 15 nC (typical per Mouser listing)
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C -55Β°C to +150Β°C
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) + Tab β€”
MSL Level 1 1 (unlimited floor life per JEDEC J-STD-020)
RoHS Status Compliant (Lead-Free PBF suffix) Compliant (PBF suffix)
Halogen-Free [DATA_NEEDED: halogen-free status] β€”
Avalanche Rated Yes (100% avalanche tested) β€”
Drain-to-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at TC=25Β°C β€” 5 A
Gate-to-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
On-Resistance Rds(on) max at VGS=10V β€” 600 milliohm
Maximum Power Dissition (PD) at TC=25Β°C β€” 43 W
Avalanche Energy Rated β€” Yes (fully characterized)
Lead-Free β€” Yes (PBF suffix indicates Pb-free plating)

Datasheets & Resources

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