IRFR3411TRPBF vs IRF7815TRPBF Comparison
Detailed side-by-side comparison of IRFR3411TRPBF by Infineon and IRF7815TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3411TRPBF | IRF7815TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.36 |
| Polarity | N-Channel | β |
| FET Type | MOSFET (Metal Oxide) | N-Channel MOSFET |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | β |
| RDS(on) max @ VGS=10V | 44 mOhm | β |
| Continuous Drain Current (Id) @ Tc | 32 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (Pd) @ Tc | 130 W | β |
| Gate Charge (Qg) | 48 nC | β |
| Operating Mode | Enhancement | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | -55C to +150C (Tj) |
| Package | TO-252AA (DPAK) | SO-8 (8-SO) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Technology | HEXFET Power MOSFET (IR) | IR MOSFET (HEXFET) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| dv/dt Rating | Dynamic dv/dt rated | β |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | β |
| Drain-to-Source Voltage (Vdss) | β | 150 V |
| Continuous Drain Current (Id) at Ta=25C | β | 5.1 A |
| Rds(on) Max at Vgs=10V | β | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | β | 3.0 V |
| Total Gate Charge (Qg) Typ | β | 25 nC |
| Maximum Power Dissipation (Ta=25C) | β | 2.5 W |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant (Pb-free) |
| Lead-Free | β | Yes |
| Configuration | β | Single |