IRFR3411TRPBF vs IRFB4110PBF Comparison

Detailed side-by-side comparison of IRFR3411TRPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR3411TRPBF IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $1.55
Polarity N-Channel β€”
FET Type MOSFET (Metal Oxide) β€”
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V β€”
RDS(on) max @ VGS=10V 44 mOhm β€”
Continuous Drain Current (Id) @ Tc 32 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (Pd) @ Tc 130 W β€”
Gate Charge (Qg) 48 nC β€”
Operating Mode Enhancement β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C β€”
Package TO-252AA (DPAK) TO-220AB (through-hole)
Mounting Type Surface Mount Through Hole
Number of Pins 3 β€”
Technology HEXFET Power MOSFET (IR) HEXFET (planar DMOS)
Avalanche Rated Yes (fully avalanche rated) β€”
dv/dt Rating Dynamic dv/dt rated β€”
Lead-Free / RoHS Yes (Lead-free, PBF suffix) β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A (bond-wire limited)
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V β€” 4.5 mΞ©
On-Resistance RDS(on) typ at VGS=10V β€” 3.7 mΞ©
Power Dissipation (PD) at TC=25Β°C β€” 370 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
RoHS Status β€” Compliant (Pb-free suffix)
Lead-Free β€” Yes (PBF suffix denotes Pb-free)

Datasheets & Resources

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