IRFR3411TRPBF vs IRFR4105TRPBF Comparison

Detailed side-by-side comparison of IRFR3411TRPBF by Infineon and IRFR4105TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF βœ“ Active

Specification Comparison

Parameter IRFR3411TRPBF IRFR4105TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.58
Polarity N-Channel β€”
FET Type MOSFET (Metal Oxide) β€”
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V β€”
RDS(on) max @ VGS=10V 44 mOhm β€”
Continuous Drain Current (Id) @ Tc 32 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (Pd) @ Tc 130 W β€”
Gate Charge (Qg) 48 nC β€”
Operating Mode Enhancement β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C -55C to +175C
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 β€”
Technology HEXFET Power MOSFET (IR) HEXFET (5th generation IR MOSFET)
Avalanche Rated Yes (fully avalanche rated) β€”
dv/dt Rating Dynamic dv/dt rated β€”
Lead-Free / RoHS Yes (Lead-free, PBF suffix) β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V_DS max) β€” 55 V
Continuous Drain Current (I_D at Tc) β€” 27 A
On-Resistance (R_DS(on) max at V_GS=10V) β€” 45 milliohm
Gate-Source Voltage (V_GS max) β€” 20 V
Total Gate Charge (Q_G) β€” 22.7 nC
Power Dissipation (P_D at Tc) β€” 68 W
Gate Threshold Voltage (V_GS(th) typ) β€” [DATA_NEEDED: V_GS(th) typical value]
RoHS Status β€” Compliant (lead-free, PBF suffix)
Packaging Type β€” Tape and Reel (TRPBF)
MSL Level β€” [DATA_NEEDED: MSL rating]
Avalanche Energy (E_AS) β€” [DATA_NEEDED: E_AS rating]

Datasheets & Resources

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