IRFR3411TRPBF vs IRFR4615TRLPBF Comparison

Detailed side-by-side comparison of IRFR3411TRPBF by Infineon and IRFR4615TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR3411TRPBF IRFR4615TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.39
Polarity N-Channel β€”
FET Type MOSFET (Metal Oxide) β€”
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V β€”
RDS(on) max @ VGS=10V 44 mOhm β€”
Continuous Drain Current (Id) @ Tc 32 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (Pd) @ Tc 130 W β€”
Gate Charge (Qg) 48 nC β€”
Operating Mode Enhancement β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C -55C to +175C
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 β€”
Technology HEXFET Power MOSFET (IR) IR MOSFET (N-Channel Enhancement Mode)
Avalanche Rated Yes (fully avalanche rated) β€”
dv/dt Rating Dynamic dv/dt rated β€”
Lead-Free / RoHS Yes (Lead-free, PBF suffix) Yes (PBF suffix indicates Pb-free)
Drain-Source Voltage (VDS) β€” 150 V
Continuous Drain Current (ID) at TC=25C β€” 33 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max]
On-Resistance RDS(on) max at VGS=10V β€” 42 mOhm
Total Gate Charge (Qg) β€” 26 nC
Gate-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C β€” 144 W
Avalanche Energy (EAS) β€” 109 mJ
Single Pulse Avalanche Energy β€” 109 mJ

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