IRFR3411TRPBF vs IRFZ34NPBF Comparison

Detailed side-by-side comparison of IRFR3411TRPBF by Infineon and IRFZ34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR3411TRPBF IRFZ34NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.61
Polarity N-Channel β€”
FET Type MOSFET (Metal Oxide) N-Channel, Enhancement Mode
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V β€”
RDS(on) max @ VGS=10V 44 mOhm β€”
Continuous Drain Current (Id) @ Tc 32 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (Pd) @ Tc 130 W β€”
Gate Charge (Qg) 48 nC β€”
Operating Mode Enhancement β€”
Maximum Junction Temperature 175 C 175 C
Operating Temperature Range -55 C to +175 C -55 C to +175 C
Package TO-252AA (DPAK) TO-220AB (3-pin + tab, through-hole)
Mounting Type Surface Mount Through Hole
Number of Pins 3 β€”
Technology HEXFET Power MOSFET (IR) HEXFET (Planar DMOS, 5th generation)
Avalanche Rated Yes (fully avalanche rated) β€”
dv/dt Rating Dynamic dv/dt rated β€”
Lead-Free / RoHS Yes (Lead-free, PBF suffix) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Status β€” Active
Drain-Source Voltage (V_DSS) β€” 55 V
Continuous Drain Current (I_D) at Tc=25C β€” 29 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C β€” 68 W
On-Resistance R_DS(on) max at V_GS=10V β€” 40 mOhm
Gate Charge (Q_g) typ β€” 22.7 nC
Gate Threshold Voltage V_GS(th) typ β€” [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ β€” [DATA_NEEDED: input capacitance]
Lead-Free Status β€” Yes (Pb-free, RoHS compliant)
Qualification β€” JEDEC standard
RoHS Status β€” Compliant
Configuration β€” Single N-Channel, 3-pin (3+tab)

Datasheets & Resources

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