IRFR4105TRPBF vs IRFR3411TRPBF Comparison

Detailed side-by-side comparison of IRFR4105TRPBF by Infineon and IRFR3411TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF βœ“ Active

Specification Comparison

Parameter IRFR4105TRPBF IRFR3411TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.55
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (5th generation IR MOSFET) HEXFET Power MOSFET (IR)
Drain-Source Voltage (V_DS max) 55 V β€”
Continuous Drain Current (I_D at Tc) 27 A β€”
On-Resistance (R_DS(on) max at V_GS=10V) 45 milliohm β€”
Gate-Source Voltage (V_GS max) 20 V β€”
Total Gate Charge (Q_G) 22.7 nC β€”
Power Dissipation (P_D at Tc) 68 W β€”
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C -55 C to +175 C
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: V_GS(th) typical value] β€”
RoHS Status Compliant (lead-free, PBF suffix) β€”
Packaging Type Tape and Reel (TRPBF) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Avalanche Energy (E_AS) [DATA_NEEDED: E_AS rating] β€”
Polarity β€” N-Channel
FET Type β€” MOSFET (Metal Oxide)
V(BR)DSS (Drain-Source Breakdown Voltage) β€” 100 V
RDS(on) max @ VGS=10V β€” 44 mOhm
Continuous Drain Current (Id) @ Tc β€” 32 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (Pd) @ Tc β€” 130 W
Gate Charge (Qg) β€” 48 nC
Operating Mode β€” Enhancement
Maximum Junction Temperature β€” 175 C
Number of Pins β€” 3
Avalanche Rated β€” Yes (fully avalanche rated)
dv/dt Rating β€” Dynamic dv/dt rated
Lead-Free / RoHS β€” Yes (Lead-free, PBF suffix)

Datasheets & Resources

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