IRFR4615TRLPBF vs IRF520NPBF Comparison
Detailed side-by-side comparison of IRFR4615TRLPBF by Infineon and IRF520NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR4615TRLPBF | IRF520NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.66 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | HEXFET (vertical DMOS) |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TC=25C | 33 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | β |
| Total Gate Charge (Qg) | 26 nC | β |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Power Dissipation (PD) at TC=25C | 144 W | β |
| Avalanche Energy (EAS) | 109 mJ | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | β |
| Single Pulse Avalanche Energy | 109 mJ | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | HEXFET |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (V_DSS) | β | 100 V |
| Continuous Drain Current (I_D) at Tc | β | 9.7 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | β | Β±20 V |
| R_DS(on) max at V_GS=10V | β | 200 mOhm |
| Total Gate Charge (Q_g) | β | 16.7 nC |
| Power Dissipation (P_D) at Tc | β | 48 W |
| MSL Level | β | 1 (unlimited) |
| RoHS Status | β | Compliant (Pb-free) |
| Lead-Free Finish | β | Yes (PBF suffix) |