IRFR4615TRLPBF vs IRFR3411TRPBF Comparison

Detailed side-by-side comparison of IRFR4615TRLPBF by Infineon and IRFR3411TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR4615TRLPBF IRFR3411TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.55
Technology IR MOSFET (N-Channel Enhancement Mode) HEXFET Power MOSFET (IR)
Drain-Source Voltage (VDS) 150 V β€”
Continuous Drain Current (ID) at TC=25C 33 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] β€”
On-Resistance RDS(on) max at VGS=10V 42 mOhm β€”
Total Gate Charge (Qg) 26 nC β€”
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] β€”
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] β€”
Power Dissipation (PD) at TC=25C 144 W β€”
Avalanche Energy (EAS) 109 mJ β€”
Operating Temperature Range -55C to +175C -55 C to +175 C
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) Yes (Lead-free, PBF suffix)
Single Pulse Avalanche Energy 109 mJ β€”
Polarity β€” N-Channel
FET Type β€” MOSFET (Metal Oxide)
V(BR)DSS (Drain-Source Breakdown Voltage) β€” 100 V
RDS(on) max @ VGS=10V β€” 44 mOhm
Continuous Drain Current (Id) @ Tc β€” 32 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (Pd) @ Tc β€” 130 W
Gate Charge (Qg) β€” 48 nC
Operating Mode β€” Enhancement
Maximum Junction Temperature β€” 175 C
Number of Pins β€” 3
Avalanche Rated β€” Yes (fully avalanche rated)
dv/dt Rating β€” Dynamic dv/dt rated

Datasheets & Resources

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