IRFR5305TRLPBF vs IRF5305PBF Comparison
Detailed side-by-side comparison of IRFR5305TRLPBF by Infineon and IRF5305PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5305TRLPBF | IRF5305PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.51 |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at Tc=25C | -31 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=-10V | 65 mΞ© | β |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | β |
| Power Dissipation (PD) at Tc=25C | 110 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin + tab) |
| Mounting Type | Surface Mount | Through Hole |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (planar DMOS) |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | β |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | β |
| FET Type | β | P-Channel |
| Drain-to-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at TC=25C | β | -31 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Maximum Power Dissition (PD) at TC=25C | β | 110 W |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | β | 60 mOhm (typical) |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | β | [DATA_NEEDED: max RDS(on) at -10V] |
| Total Gate Charge (Qg) | β | 42 nC (typical) |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Turn-On Delay Time (td(on)) | β | [DATA_NEEDED: td(on)] |
| Turn-Off Delay Time (td(off)) | β | [DATA_NEEDED: td(off)] |
| Thermal Resistance, Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC] |
| Thermal Resistance, Junction-to-Ambient (RthJA) | β | [DATA_NEEDED: RthJA] |
| Lead-Free Plating (PBF suffix) | β | Yes (Pb-free) |
| RoHS Status | β | Compliant |