IRFR5305TRLPBF vs IRFU5305PBF Comparison

Detailed side-by-side comparison of IRFR5305TRLPBF by Infineon and IRFU5305PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5305TRLPBF IRFU5305PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.68
Polarity / Channel Type P-Channel
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc=25C -31 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] -110 A (pulsed)
Gate-Source Voltage (VGS) max ±20 V ±20 V
RDS(on) max at VGS=-10V 65 mΩ
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C 110 W
Operating Junction Temperature -55C to +175C -55 °C to +175 °C
Package TO-252AA (DPAK), surface mount IPAK (TO-251AA) Through-Hole, 3 pins
Mounting Type Surface Mount Through Hole
Technology HEXFET fifth-generation planar MOSFET
Avalanche Rated Yes (fully avalanche rated) Yes (EAS rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left)
Polarity P-Channel
Continuous Drain Current (ID) at Tc -31 A
On-Resistance RDS(on) max @ VGS=-10V 65 mΩ
Total Gate Charge (Qg) 42 nC (typical)
Power Dissipation (PD) at Tc=25°C 110 W
Thermal Resistance Junction-to-Case (RθJC) 1.36 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) 62 °C/W
RoHS Compliance Compliant

Datasheets & Resources

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